December 2023 GaN newsletter: Intel accelerates the development of GaN integrated circuits

SOPHIA ANTIPOLIS, France – December 18, 2023 │ The GaN newsletter for December 2023 is now available! This monthly newsletter allows you to keep up to date on the latest scientific publications, patent applications, and news related to III-Nitride semiconductors (GaN, AlN, InN, and alloys) for optoelectronic and electronic applications (power, RF, LED, laser, photonics,[…]

GaN electronics patent landscape 2023: A unified picture of the IP competition for power GaN and RF GaN technologies

SOPHIA ANTIPOLIS, France – December 5, 2023 │ Knowmade is releasing a new GaN intellectual property (IP) report providing a deep dive into the power GaN and RF GaN electronics patents worldwide. In this report, both power GaN and RF GaN patent landscapes have been analyzed in a view to describe the global IP competition[…]

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Next-generation power devices: Status of the IP competition for vertical GaN power devices

SOPHIA ANTIPOLIS, France – November 29, 2023 │ Gallium nitride (GaN) power devices were successfully adopted in several power applications, starting with lateral GaN devices. Following the release of its new GaN electronics IP report, KnowMade discusses the status of vertical GaN device technology in the power GaN patent landscape. With the potential to overcome[…]

Q3 2023 GaN electronics patent monitor report: GaNcool, a new pure player joining power GaN competition

SOPHIA ANTIPOLIS, France – November 16, 2023 │ The quarterly report for Q3 2023 GaN Electronics patent monitor is now available. This monitoring service allows you to keep up to date on GaN-related patent activity for RF & Power electronics: new patent publications, newly granted patents, patents expired or abandoned, latest patent transfers and patent[…]