Power GaN and RF GaN companies strengthened patent portfolios in Q1 2025

SOPHIA ANTIPOLIS, France – June 10, 2025 │ KnowMade today announced the publication of its Q1 2025 IP report on GaN electronics, highlighting robust patenting activity across both power and RF segments. Amid on-going patent disputes between leaders in the power GaN device market, companies keep executing their strategy to address this market. Recent patent filings[…]

Featured image of the article Patent Activity Surrounding GaN and Diamond Integration.

Patent Activity Surrounding GaN and Diamond Integration

SOPHIA ANTIPOLIS, France – July 30, 2024 │ GaN electronic devices, especially GaN-based high electron mobility transistors (HEMT), are increasingly used in RF and power conversion applications. Yet in the most demanding applications, GaN device performance and reliability may be limited by thermal considerations such as the channel temperature. Some forms of enriched monocrystalline synthetic[…]

Webinar – Current and emerging trends in the power GaN patent landscape

SOPHIA ANTIPOLIS, France – April 25, 2024 │Get an update on the Power GaN patent landscape with Dr. Rémi Comyn. He gave an online lecture, and you can find a report and the materials he posted here. Webinar video recording About the subject Since 2019, KnowMade has been researching and monitoring the intellectual property (IP)[…]

December 2023 GaN newsletter: Intel accelerates the development of GaN integrated circuits

SOPHIA ANTIPOLIS, France – December 18, 2023 │ The GaN newsletter for December 2023 is now available! This monthly newsletter allows you to keep up to date on the latest scientific publications, patent applications, and news related to III-Nitride semiconductors (GaN, AlN, InN, and alloys) for optoelectronic and electronic applications (power, RF, LED, laser, photonics,[…]