Featured image of the article Our poster at SEMICON Europa on Advanced Semiconductor Packaging: Leading Patent Owners and New Entrants.

Our poster at SEMICON Europa on Advanced Semiconductor Packaging: Leading Patent Owners and New Entrants

SOPHIA ANTIPOLIS, France – November 15, 2024 │Dr. Pauline Calka, from our Semiconductor team, presented a poster during SEMICON Europa 2024, providing information on Advanced packaging from a patent perspective. It is now available online. Poster About the subject Advanced packaging techniques have emerged as crucial solutions to meet the needs of the semiconductor industry.[…]

Featured image of the article TongFu Microelectronics is investing in hybrid bonding intellectual property to bolster its advanced packaging activities.

TongFu Microelectronics is investing in hybrid bonding intellectual property to bolster its advanced packaging activities

SOPHIA ANTIPOLIS, France – September 12, 2024 │ Artificial intelligence (AI) and high-performance computing (HPC) are considered crucial for both economic and military strength. In this context, the U.S. has implemented various restrictions on China, particularly aimed at the semiconductor industry, including limiting the sale of advanced chips and related manufacturing equipment to Chinese companies.[…]

Advanced semiconductor packaging: leading patent owners and new entrants

SOPHIA ANTIPOLIS, France – September 06, 2024 │Propelled by the increasing demand for data processing in high-performance computing (HPC) applications, 5G and beyond communication networks, and autonomous vehicles, a tremendous number of new inventions related to advanced semiconductor packaging have been published in recent years. By analyzing patents, the technological evolutions and the competitive landscape[…]

Featured image of the article Patent Activity Surrounding GaN and Diamond Integration.

Patent Activity Surrounding GaN and Diamond Integration

SOPHIA ANTIPOLIS, France – July 30, 2024 │ GaN electronic devices, especially GaN-based high electron mobility transistors (HEMT), are increasingly used in RF and power conversion applications. Yet in the most demanding applications, GaN device performance and reliability may be limited by thermal considerations such as the channel temperature. Some forms of enriched monocrystalline synthetic[…]