Why does II-VI rely on General Electric’s IP to conquer the power SiC markets?

SOPHIA ANTIPOLIS, France – July 07, 2020 | As announced earlier this month, optical component and materials maker II-VI has licensed Silicon Carbide (SiC) technology from General Electric with a view to move into power devices and modules. Just like Cree/Wolfspeed and Rohm Group Company (including SiCrystal), the main competitors of II-VI on the SiC wafer[…]

TSMC’s GaN-on-Silicon patents supporting STMicroelectronics’ strategic move towards power GaN adoption in automotive applications

SOPHIA ANTIPOLIS, France – February 24, 2020 | As announced earlier this month, STMicroelectronics (ST) will collaborate with Taiwan Semiconductor Manufacturing Corporation (TSMC) in order to accelerate the development of GaN technology for power applications, and more specifically for automotive applications (converters and chargers for hybrid and electric vehicles). With this recent manufacturing partnership, STMicroelectronics[…]

GaN-on-Si: many opportunities are driven by microLED, power electronics and RF electronics

SOPHIA ANTIPOLIS, France – January 24, 2020 | “2015-2020 period has shown tremendous and decisive changes within the GaN-on-Si landscape, especially the strategy of players involved” affirms Nicolas Baron, CEO and Co-founder of KnowMade. He adds: “For example, Toshiba’s withdrawal from white LED market and the acquisition of IR by Infineon Technologies in 2015”. OUTLINES:[…]