KnowMade
MENUMENU
  • Home
  • Company
    • Company
    • References
    • Career
  • Expertise
    • RF & Telecom
    • Power & Battery
    • MEMS & Opto
    • Healthcare
  • Products & Services
    • Reports
      • RF & Telecom
      • Power & Battery
      • MEMS & Opto
      • Healthcare
    • Monitors
      • RF & Telecom
      • Power & battery
      • Healthcare
    • Custom studies
      • Patent Search
      • Patent Landscape
      • FTO Analysis
      • Others
  • News
    • RF & Telecom
    • Power & Battery
    • MEMS & Opto
    • Healthcare
  • Contact
    • Contact us
    • Subscribe
  • 0

Figure 5 Patent US10867876 filed by Denso in 2019 and describing orthogonal deep-P trench MOSFET structure (ODS)

Posted on August 2, 2022August 2, 2022 by knowmade

Diagram of a Denso-owned patented SiC technology.

Bookmark the permalink.

Post navigation

← The vertical innovation path: from materials to power devices and their integration in electric vehicles (EV)

Latest reports

  • Silicon Carbide (SiC) Patent Landscape 2022
  • Silicon Anode for Li-ion Batteries Patent Landscape 2022
  • LiDAR for Automotive Patent Landscape 2022
  • Solid-State ​Li-ion Batteries with Inorganic Solid Electrolytes Patent Landscape 2021
  • Circulating DNA/RNA Patent Landscape 2021
  • Antenna in Package Patent Landscape 2021
  • RNA vaccine Patent Landscape 2021
  • Next-Generation Power Modules Patent Landscape 2021
  • RF GaN Patent Landscape 2020
  • Cancer Diagnostics Startup Identification 2020
  • Microneedles for drug delivery Patent Landscape 2020
  • Immunotherapy in Oncology Startup Identification 2020
  • Microfluidics Startup Identification 2020
Privacy policy / Terms & conditions
Knowmade SARL 2405 route des Dolines 06902 Sophia Antipolis FRANCE
contact@knowmade.fr

Copyright ©2022. KnowMade