What are patent portfolio characteristics of the main companies and research laboratories involved in the GaN technology?
Publication December 2016

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ACCESS TO THE PORTFOLIO ANALYSIS OF THE TOP-100 IP PLAYERS IN GAN TECHNOLOGY

The field of III-N semiconductors has shown an intensive patenting activity since early 1990s, with a substantial increase during the past decade. Today, more than 76,200 patents and patent applications related to over 39,700 inventions on GaN technology have been published worldwide through November 2016. This fact is correlated with a rapid growth of the industrial activity related to GaN, mainly due to light-emitting diodes, but also to the emergence of lasers and high-power/high-frequency electronics. Moreover, the current diversification of GaN-related research activities is remarkable, ranging from advanced optical sources and single-electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. In this dynamic and large context, it is necessary to have a clear overview of main companies and research laboratories involved in this technology domain.
The report provides essential patent data for IP players related to GaN technology. It identifies 100 major patent holders involved in GaN technology, and its provides in a single slide the IP profile of each main patent holder including: time evolution of patent publications, geographic map of patenting activity, technical segments, highly cited patents, main IP competitors and IP collaborators.

patent-portfolio-analysis-gan-aotTime evolution of patent publications shows the number of patent publications of the company between 1995 and 2016. The number of patent families related to GaN technology is also indicated. Moreover, for each country or geographical zone (USA, Europe, Korea, Japan, Taiwan and China), a mapping of patenting activity is presented. A patent portfolio segmentation is provided to understand the technologies claimed by each main assignee. This segmentation shows the number of patent families by application (LED, LASER, Power, RF and Crystal growth), growth substrate (Sapphire, Silicon, Silicon Carbide) and growth technique (MOCVD, MBE, HVPE, Ammonothermal and LPE). A selection of patents receiving a high number of citations is provided to identify quickly key technologies filed by each patent assignee. Main competitors have been selected for each IP player. This selection based on patent citations allows to identify companies with similar patented technologies. Furthermore, on the base on patent co-filings, reassignments and licenses, main IP collaborators have been identified. All this information available on a single slide for each player make easier the assessment of their IP situation in GaN field.

COMPANIES MENTIONED IN THE REPORT

ADVANCED OPTOELECTRONIC TECHNOLOGY, ADVANCED POWER DEVICE RESEARCH ASSOCIATION, APPLIED MATERIALS, AVOGY, CANON, CEA, CHONBUK NATIONAL UNIVERSITY, CREE, DOWA ELECTRONICS MATERIALS, ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE, ENRAYTEK OPTOELECTRONICS, EPISTAR, EPIVALLEY, FOCUS LIGHTINGS TECHNOLOGY, FORMOSA EPITAXY, FREESCALE, FUJI ELECTRIC, FUJIFILM, FUJITSU, FURUKAWA ELECTRIC, GENERAL ELECTRIC, GENESIS PHOTONICS, GLOBALFOUNDRIES, GWANGJU INSTITUTE OF SCIENCE & TECHNOLOGY, HANGZHOU SILAN AZURE, HC SEMITEK, HEWLETT PACKARD, HITACHI, HON HAI PRECISION INDUSTRY, HRL LABORATORIES, HUNAN HUALEI OPTOELECTRONIC, IBM, ILJIN LED, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (ITRI), INFINEON, INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES, INSTITUTE OF SEMICONDUCTORS, INTEL, INTERNATIONAL RECTIFIER, IRICO, JAPAN SCIENCE & TECHNOLOGY AGENCY, KOHA, KOREA PHOTONICS TECHNOLOGY INSTITUTE (KOPTI), KYOCERA, LG, MASSACHUSETTS INSTITUTE OF TECHNOLOGY, MERCK, MICRON TECHNOLOGY, MITSUBISHI, NAGOYA UNIVERSITY, NANJING UNIVERSITY OF TECHNOLOGY, NATIONAL INSTI.OF ADVANCED IND. SCI. & TECHN. (AIST), NEC, NEW JAPAN RADIO, NGK INSULATORS, NICHIA, NIPPON TELEGRAPH & TELEPHONE, NXP, OKI ELECTRIC INDUSTRY, OSAKA UNIVERSITY, OSRAM, PANASONIC, PHILIPS, POSTECH FOUNDATION, RENESAS, RICOH, SAMSUNG, SANAN OPTOELECTRONICS, SANKEN ELECTRIC, SANYO, SEMICON LIGHT, SEMICONDUCTOR ENERGY LABORATORY (SEL), SENSOR ELECTRONIC TECHNOLOGY, SEOUL SEMICONDUCTOR, SEOUL VIOSYS, SHANDONG HUAGUANG OPTOELECTRONICS, SHARP, SHOWA DENKO, SINO NITRIDE SEMICONDUCTOR, SOITEC, SONY, SORAA, SOUTH CHINA UNIVERSITY OF TECHNOLOGY, SOUTHEAST UNIVERSITY, STANLEY ELECTRIC, SUMITOMO, SUN YAT-SEN UNIVERSITY, TAIWAN SEMICONDUCTOR MANUFACTURING (TSMC), TOKUYAMA, TOSHIBA, TOYODA GOSEI, TOYOTA, TSINGHUA UNIVERSITY, UNIVERSITY BEIJING, UNIVERSITY OF CALIFORNIA, UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY OF CHINA, UNIVERSITY TOHOKU, US NAVY, USHIO, XIAMEN CHANGELIGHT, XIDIAN UNIVERSITY